Switchable Polarities in BiI3 Under Pressure
Author Information
Author(s): Yue Lei, Tian Fuyu, Liu Ran, Li Zonglun, Li Ruixin, Li Chenyi, Li Yanchun, Yang Dongliang, Li Xiaodong, Li Quanjun, Zhang Lijun, Liu Bingbing
Primary Institution: Jilin University, Changchun, China
Hypothesis
Can pressure engineering induce reversible p-n switching in BiI3 and enhance its photoelectric properties?
Conclusion
The study successfully demonstrated that applying pressure to BiI3 can induce dramatic p-n switching and significantly improve its photoelectric properties.
Supporting Evidence
- Pressure-induced p-n switching was confirmed through photocurrent measurements.
- The photocurrent increased by more than three orders of magnitude at high pressure.
- First-principles calculations showed enhanced charge density and energy band dispersion under pressure.
Takeaway
By squeezing BiI3, scientists can change how it conducts electricity, making it better for devices that use light.
Methodology
The study employed high-pressure characterization and first-principles calculations to investigate the structural and photoelectric properties of BiI3.
Digital Object Identifier (DOI)
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