Effect of Gallium Doping on Stability and Properties of Thin Film Transistors
Author Information
Author(s): Guo Liang, Wang Qing, Wang Chao, Chu Xuefeng, Hao Yunpeng, Chi Yaodan, Yang Xiaotian, Sun Haiding, Birowosuto Muhammad Danang
Primary Institution: Jilin Jianzhu University
Hypothesis
How does Ga doping affect the stability and optoelectronic properties of ZnSnO thin film transistors?
Conclusion
Ga doping improves the stability and optical properties of ZnSnO thin film transistors while reducing carrier concentration.
Supporting Evidence
- The surface of GZTO films is smooth, which is favorable for stability.
- The off-state current is reduced by a factor of 10.
- The optical bandgap of the TFTs increased from 3.61 eV to 3.84 eV after Ga doping.
- GZTO TFTs show higher responsiveness and better-sustained photoconductivity under UV irradiation.
- Ga doping reduces the concentration of oxygen vacancies and defects, improving stability.
Takeaway
Adding gallium to certain materials makes them work better and last longer, especially when used in devices that detect light.
Methodology
The study involved co-sputtering GaO and ZTO targets with varying sputtering powers to create thin films, which were then tested for electrical and optical properties.
Limitations
The study does not specify the long-term stability of the devices or the effects of environmental factors on performance.
Digital Object Identifier (DOI)
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