Band Alignment of Stacked Crystalline Si/GaN pn Heterostructures Interfaced with an Amorphous Region Using X-Ray Photoelectron Spectroscopy
2024
Band Alignment of Stacked Si/GaN Heterostructures
publication
Evidence: high
Author Information
Author(s): Kim Kwangeun
Primary Institution: School of Electronics and Information Engineering, Korea Aerospace University
Hypothesis
The study investigates how the amorphous interface region affects the energy band alignment of stacked Si/GaN heterostructures.
Conclusion
The study reveals that the amorphous interface region significantly influences the energy band alignment and electronic properties of the stacked Si/GaN heterostructure.
Supporting Evidence
- The study found that the amorphous interface region alters the energy band of the stacked heterostructure.
- Electrical measurements showed improved performance of the stacked Si/GaN pn heterostructure diode.
- The diode exhibited a low leakage current density of 5 × 10−5 A/cm2.
Takeaway
This study shows that the layer between two materials can change how they work together, which is important for making better electronic devices.
Methodology
The energy band alignment was analyzed using X-ray photoelectron spectroscopy (XPS) depth profiling.
Digital Object Identifier (DOI)
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