Understanding Conductive Mechanisms in Perovskite Nanofibers for Memory Applications
Author Information
Author(s): Hu Quanli, Luo Hanqiong, Song Chao, Wang Yin, Yue Bin, Liu Jinghai, Yang Li
Primary Institution: Inner Mongolia Minzu University
Hypothesis
The oxygen vacancies in RCoO3 can easily generate conductive filaments, which dominate the resistance transition mechanism of Pt/RCoO3/Pt.
Conclusion
The study confirmed the potential application of LaCoO3, NdCoO3, and SmCoO3 in memory storage devices.
Supporting Evidence
- RRAM devices are a promising next-generation memory device with high memory density and low power consumption.
- Oxygen vacancies in perovskite oxides enhance resistive switching performance.
- DFT simulations revealed the conduction mechanisms in Pt/RCoO3/Pt devices.
- Conductive filaments are formed due to the migration of oxygen ions under an electric field.
Takeaway
This study looks at special materials that can help make better memory storage devices by using tiny structures called nanofibers.
Methodology
The study utilized density functional theory (DFT) to investigate the resistive switching behaviors in RCoO3 nanofibers, along with various characterization techniques like XRD, SEM, and XPS.
Limitations
The conduction in LaCoO3, NdCoO3, and SmCoO3 for nonvolatile RRAM devices has not been theoretically demonstrated much in the literature.
Digital Object Identifier (DOI)
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