Transport and Magnetoresistance in WSe2 Junctions
Author Information
Author(s): Li Ming, Zhao Zheng-Yin, Sheng Jia-Yi
Primary Institution: College of Science, Xuchang University, Xuchang, 461000 China
Hypothesis
The study investigates the spin and valley dependent transport and tunneling magnetoresistance in irradiated ferromagnetic WSe2 double barrier junctions.
Conclusion
The research reveals that the energy regions for full spin and valley polarizations and large tunneling magnetoresistance can be modulated by electric potential, CPL intensity, and exchange field.
Supporting Evidence
- The study demonstrates that the energy region for tunneling magnetoresistance increases with the exchange field.
- It is shown that the valley polarization can be switched by reversing the helicity of the circularly polarized light.
- The research identifies the minimum incident energy for non-zero spin- and valley-resolved conductance.
Takeaway
This study shows how we can control the flow of electricity in special materials called WSe2 by using light and electric fields, which can help make better electronic devices.
Methodology
The study uses theoretical modeling and numerical calculations to analyze the effects of gate voltage and circularly polarized light on the junction.
Digital Object Identifier (DOI)
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