Low-Temperature Bonding for Silicon Chips and Diamond Films
Author Information
Author(s): Lu Jicun, Lv Xiaochun, Zhang Chenghao, Zhang Chuting, Liu Yang
Primary Institution: Guanghua Lingang Engineering Application Technology Research and Development (Shanghai) Co., Ltd.
Hypothesis
Can low-temperature bonding technology effectively integrate silicon chips with nanocrystalline diamond films?
Conclusion
The study successfully achieved heterogeneous integration of silicon chips and diamond substrates using low-temperature bonding technology.
Supporting Evidence
- The integration temperature did not exceed 250 °C.
- Cu nanostructures with sizes of ~200 nm formed an island-like shape.
- A uniform and reliable seam was obtained between the Si chip and NCD.
Takeaway
This study shows how to stick silicon chips to diamond using a special glue that works at low temperatures, which is important for making better electronic devices.
Methodology
The study involved depositing Ti and Cu layers on nanocrystalline diamond films using magnetron sputtering, followed by thermo-compression sintering with copper nanoparticles.
Limitations
The study primarily focuses on bonding at temperatures not exceeding 250 °C, and further research is needed for bonding below 200 °C.
Digital Object Identifier (DOI)
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