Author Correction: Epitaxial growth of high-quality GaN with a high growth rate at low temperatures by radical-enhanced metalorganic chemical vapor deposition
2024
Correction to Epitaxial Growth of High-Quality GaN
publication
Author Information
Author(s): Dhasiyan Arun Kumar, Amalraj Frank Wilson, Jayaprasad Swathy, Shimizu Naohiro, Oda Osamu, Ishikawa Kenji, Hori Masaru
Primary Institution: Center for Low-Temperature Plasma Science (cLPS), Nagoya University
Conclusion
The original article contained an error in the figure legends, which has now been corrected.
Takeaway
There was a mistake in the figures of a study about growing GaN, and it has been fixed.
Digital Object Identifier (DOI)
Want to read the original?
Access the complete publication on the publisher's website