High-Performance GaN-on-Si PiN Diode with Beveled Sidewall and Fluorine Plasma Treatment
Author Information
Author(s): Jia Fuchun, Chang Qingyuan, Li Mengdi, Liu Yungang, Lu Ziyan, Zhang Jifan, Lai Jinming, Lu Hao, Lu Yang, Hou Bin, Yang Ling, Ma Xiaohua
Primary Institution: State Key Discipline Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi’an, China
Hypothesis
Can the combination of beveled sidewall and fluorine plasma treatment improve the reverse characteristics of GaN-on-Si PiN diodes?
Conclusion
The study demonstrates that the combination of beveled sidewall and fluorine plasma treatment significantly enhances the breakdown voltage and reduces leakage current in GaN-on-Si PiN diodes.
Supporting Evidence
- The diodes achieved a breakdown voltage of 790 V and a low reverse leakage current.
- The specific on-resistance was measured at 0.51 mΩ·cm2.
- The Baliga’s figure of merit was calculated to be 1.22 GW/cm2.
- The study identified sidewall leakage as the main leakage path in the diodes.
Takeaway
This study shows that using a special sidewall shape and a gas treatment can make a type of diode work better and last longer.
Methodology
The study involved fabricating GaN-on-Si quasi-vertical PiN diodes and analyzing their reverse characteristics using TCAD simulations and experimental measurements.
Digital Object Identifier (DOI)
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