Stabilizing P-Type Doping in 2D Semiconductors
Author Information
Author(s): Qiu Guitian, Kong Lingan, Han Mengjiao, Zhang Qian, Rehman Majeed Ur, Yi Jianxian, Xian Lede, Lin Xiankai, Abbas Aumber, Chen Jiwei, Luo Yingjie, Li Wenbo, Wei Zhongchao, Meng Hongyun, Ma Xiuliang, Liang Qijie
Primary Institution: South China Normal University
Hypothesis
Can an intralayer/interlayer codoping strategy stabilize p-type doping in 2D semiconductors?
Conclusion
The study successfully demonstrates a method to achieve stable p-type doping in 2D semiconductors, enhancing hole mobility significantly.
Supporting Evidence
- The hole mobility of WSe2 increased from 0.7 to 92 cm2 V−1 s−1 after codoping.
- The codoping strategy maintained air stability for up to 9 months.
- Successful demonstration of CMOS inverters and complex logic functions was achieved.
- Structural and elemental characterizations confirmed the presence of dopants.
- DFT calculations supported the stability of the codoped system.
Takeaway
The researchers found a way to make certain materials work better for electronics by adding special ions, which helps them stay stable for a long time.
Methodology
The study used density functional theory (DFT), high-resolution transmission electron microscopy (HRTEM), and X-ray photoelectron spectroscopy (XPS) to validate the codoping mechanism.
Limitations
The study primarily focuses on specific 2D materials and may not be generalizable to all semiconductor types.
Digital Object Identifier (DOI)
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