Understanding Conductance Switching in a Neuromorphic Material
Author Information
Author(s): Ponis John, Jerla Nicholas, Agbeworvi George, Perez-Beltran Saul, Kumar Nitin, Ashen Kenna, Li Jialu, Wang Edrick, Smeaton Michelle A., Jardali Fatme, Chakraborty Sarbajeet, Shamberger Patrick J., Jungjohann Katherine L., Weiland Conan, Jaye Cherno, Ma Lu, Fischer Daniel, Guo Jinghua, Sambandamurthy G., Qian Xiaofeng, Banerjee Sarbajit
Primary Institution: Texas A&M University
Hypothesis
What are the atomic origins of conductance switching in ε-Cu0.9V2O5?
Conclusion
The study reveals that conductance switching in ε-Cu0.9V2O5 is driven by the mobility of Cu ions and their interactions with the vanadium oxide framework.
Supporting Evidence
- Conductance switching was observed to span almost 2 orders of magnitude at around 146 K.
- Single-crystal X-ray diffraction revealed superlattice ordering of Cu ions at low temperatures.
- X-ray absorption and emission spectroscopies showed that Cu 3d and V 3d orbitals overlap near the Fermi level.
Takeaway
This research shows how tiny changes in the arrangement of atoms in a material can help create better computer circuits that work like the human brain.
Methodology
The study used single-crystal X-ray diffraction, X-ray absorption and emission spectroscopies, and molecular dynamics simulations to analyze the material.
Limitations
The study may not account for all variations in compositions and defect concentrations across different samples.
Digital Object Identifier (DOI)
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