Improving 3D NAND Flash Memory Lifetime with LA-Write
Author Information
Author(s): Wang Jialin, Fan Yi, Du Yajuan, Huang Siyi, Wan Yu, Sverdlov Viktor
Primary Institution: College of Electrical Engineering, Naval University of Engineering
Hypothesis
Can a new layer-aware write strategy extend the lifetime of 3D NAND flash memory by balancing endurance variations between layers?
Conclusion
The LA-Write strategy significantly extends the lifetime of 3D NAND flash memory by directing more write operations to more durable layers.
Supporting Evidence
- LA-Write improved SSD lifetime by 31% on average compared to traditional methods.
- The bottom layer pages had the fastest growth in bit error rate, affecting overall memory lifespan.
- LA-Write uses a layer-aware table to optimize write operations based on endurance characteristics.
- Experimental results showed that LA-Write can balance endurance across different layers effectively.
Takeaway
This study found a way to make flash memory last longer by writing to the stronger parts more often, which helps the weaker parts not wear out too quickly.
Methodology
The study used the DiskSim simulator to evaluate the LA-Write strategy under various workloads.
Limitations
The study's findings may not directly translate to real-world devices without further validation.
Statistical Information
Statistical Significance
p<0.05
Digital Object Identifier (DOI)
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