Impact of Bias Voltage on W-Doped ZnO Films
Author Information
Author(s): Mei Haijuan, Wang Wanli, Zhao Junfeng, Zhong Weilong, Qiu Muyi, Xu Jiayang, Gao Kailin, Liu Ge, Liang Jianchu, Gong Weiping, Evaristo Manuel António Peralta, Mitterer Christian
Primary Institution: Guangdong Provincial Key Laboratory of Electronic Functional Materials and Devices, Huizhou University, Huizhou 516007, China
Hypothesis
How does bias voltage affect the microstructure and photoelectric properties of W-doped ZnO films?
Conclusion
The study found that the best photoelectric properties of W-doped ZnO films were achieved at a bias voltage of -100 V.
Supporting Evidence
- The deposition rate of WZO films first decreased and then increased with bias voltage changes.
- All films exhibited a hexagonal wurtzite structure with a strong (002) preferred orientation.
- The highest figure of merit of 5.8 × 10−4 Ω−1 was achieved at -100 V.
Takeaway
Changing the voltage while making W-doped ZnO films can change how they look and how well they conduct electricity and light.
Methodology
W-doped ZnO films were deposited on glass substrates using RF magnetron sputtering at various bias voltages.
Digital Object Identifier (DOI)
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