Optimizing Etching Chemistry with Ethylene and Helium
Author Information
Author(s): Lee Hwa-Rim, Jung Eun-Su, Yoo Jin-Uk, Choi Tae-Min, Pyo Sung-Gyu
Primary Institution: School of Integrative Engineering, Chung-Ang University
Hypothesis
How do different passivation gases affect the properties of polymers formed during the etching process in aluminum interconnect structures?
Conclusion
Using ethylene diluted with helium results in a thinner, weaker polymer with lower chlorine residue compared to nitrogen, which forms a thicker, stronger polymer.
Supporting Evidence
- Using C2H4 leads to a thinner, weaker polymer with lower chlorine residue compared to N2.
- Elemental analysis shows significant differences in carbon and oxygen content between the two gases.
- N2 creates a more robust polymer layer that retains more residual fluorine.
- C2H4/He results in a cleaner surface with thinner polymer layers.
- The choice of passivation gas critically influences polymer characteristics and residue profiles.
Takeaway
This study shows that the type of gas used during etching can change how strong and thick the protective layer is on metal, which is important for making tiny electronic parts.
Methodology
The study compared the effects of nitrogen and ethylene diluted with helium as passivation gases on polymer properties during the etching process.
Digital Object Identifier (DOI)
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