Disordering in Stacking of γ‐GeSe Crystals
Author Information
Author(s): Kim Joonho, Lee Giyeok, Lee Sol, Park Jinsub, Lee Kihyun, Jung Joong‐Eon, Lim Seungjae, Jang Jeongsu, Bae Heesun, Lee Jae‐Ung, Im Seongil, Soon Aloysius, Kim Kwanpyo
Primary Institution: Yonsei University
Hypothesis
How does thermal activation affect the interlayer stacking disorder in γ‐GeSe?
Conclusion
Thermal activation leads to irreversible disordering in the interlayer stacking of γ‐GeSe, potentially resulting in a fully randomized configuration.
Supporting Evidence
- Joule heating can induce stacking disorder in γ‐GeSe.
- Statistical analysis showed a significant increase in stacking faults after electrical biasing.
- First-principles calculations confirmed low energy barriers for interlayer sliding.
Takeaway
When we heat up a special crystal called γ‐GeSe, its layers can get mixed up and disordered, which can change how it behaves.
Methodology
The study used atomic resolution scanning transmission electron microscopy (STEM) and first-principles calculations to investigate stacking configurations.
Limitations
The study primarily focuses on the effects of thermal and electrical treatments without exploring other potential influences on stacking disorder.
Digital Object Identifier (DOI)
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