Dry Etching of InGaZnO Thin Films
Author Information
Author(s): Oh Changyong, Ju Myeong Woo, Jeong Hojun, Song Jun Ho, Kim Bo Sung, Lee Dae Gyu, Cho ChoongHo, Paskaleva Albena
Primary Institution: Samsung Electronics; Korea University
Hypothesis
Can inductively coupled plasma–reactive-ion etching (ICP-RIE) with HCl and argon gas improve the etching characteristics of InGaZnO thin films?
Conclusion
The study found that using a high HCl composition ratio and moderate RIE power resulted in an excellent etch rate and surface morphology for InGaZnO thin films.
Supporting Evidence
- The highest etch rate of 83.2 nm/min was achieved under optimal conditions.
- Using a high HCl composition ratio minimized etching damage to the photoresist.
- The etching process resulted in excellent surface morphology of the underlying SiO2 film.
- Anisotropic etching behavior was confirmed, leading to precise patterning.
- The study demonstrated effective patterning for top-gate IGZO thin-film transistors.
Takeaway
This study shows how to etch a special type of film used in screens really well, making it easier to create tiny patterns without damaging them.
Methodology
The etching characteristics were studied by varying the gas mixture of HCl and Ar, along with adjusting the RF bias power and chamber pressure.
Limitations
The study primarily focused on specific gas ratios and may not account for all possible etching conditions.
Digital Object Identifier (DOI)
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