Downscaling of Organic Field‐Effect Transistors based on High‐Mobility Semiconducting Blends for High‐Frequency Operation
2024

High-Frequency Organic Transistors with Small Molecule/Polymer Blends

publication Evidence: high

Author Information

Author(s): Losi Tommaso, Viola Fabrizio Antonio, Sala Elda, Heeney Martin, He Qiao, Kleemann Hans, Caironi Mario

Primary Institution: Center for Nano Science and Technology Istituto Italiano di Tecnologia

Hypothesis

Can high-mobility organic semiconductor blends be effectively integrated into downscaled transistors for high-frequency applications?

Conclusion

The study demonstrates that high-performance organic blends can be used in downscaled transistors, achieving a transition frequency of 23 MHz at -8 V.

Supporting Evidence

  • The blend achieved a transition frequency of 23 MHz at -8 V.
  • Molecular doping reduced contact resistance to 260 Ωcm.
  • The devices maintained good stability in air for up to 6 weeks.
  • Low voltage operation was achieved with a dielectric stack of approximately 75 nm.
  • High apparent field-effect mobility of 3 cm2/(Vs) was retained in downscaled transistors.

Takeaway

This research shows that we can make tiny electronic parts that work really fast using special materials that mix small molecules and polymers.

Methodology

The study involved integrating a high-mobility organic semiconducting blend into downscaled transistors and optimizing their performance through molecular doping and dielectric engineering.

Potential Biases

High current densities led to thermal power dissipation, causing performance degradation.

Limitations

The devices showed bias instability and thermal degradation at high current densities.

Digital Object Identifier (DOI)

10.1002/smtd.202400546

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