High Breakdown Voltage in GaN Buffer on SOI Substrates
Author Information
Author(s): You Shuzhen, Lei Yilong, Wang Liang, Chen Xing, Zhou Ting, Wang Yi, Wang Junbo, Liu Tong, Li Xiangdong, Zhao Shenglei, Zhang Jincheng, Hao Yue, Nguyen Nam-Trung
Primary Institution: Guangzhou Wide Bandgap Semiconductor Innovation Center, Guangzhou Institute of Technology, Xidian University, Guangzhou, China
Hypothesis
Can a reversed stepped superlattice buffer improve the breakdown voltage of GaN on SOI substrates?
Conclusion
The study achieved a breakdown voltage of 750 V for a GaN buffer on SOI substrates using a reversed stepped superlattice structure.
Supporting Evidence
- The GaN buffer achieved a breakdown voltage of 750 V for a thickness of 3.3 µm.
- The breakdown field strength of the GaN buffer layer was estimated to be ~2.27 MV/cm.
- The buffer demonstrated a low dispersion of less than 10%, suitable for device fabrication.
- The fabricated D-mode GaN HEMT showed a good on/off ratio of ~109.
Takeaway
This study shows that using a special layer structure can help make better materials for electronics that can handle more voltage without breaking.
Methodology
The GaN buffer structure was grown on 200 mm SOI substrates using metal-organic chemical vapor deposition (MOCVD).
Limitations
The study does not address the long-term reliability of the GaN buffer under operational conditions.
Digital Object Identifier (DOI)
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