Switchable Polarities in BiI3 Under Pressure
Author Information
Author(s): Yue Lei, Tian Fuyu, Liu Ran, Li Zonglun, Li Ruixin, Li Chenyi, Li Yanchun, Yang Dongliang, Li Xiaodong, Li Quanjun, Zhang Lijun, Liu Bingbing
Primary Institution: Jilin University, Changchun, China
Hypothesis
Can pressure engineering induce reversible p-n switching in BiI3 and enhance its photoelectric properties?
Conclusion
The study successfully demonstrated that pressure can induce dramatic p-n switching in BiI3, significantly improving its photoelectric properties.
Supporting Evidence
- Pressure-induced p-n switching was confirmed through photocurrent measurements.
- The photocurrent increased by more than three orders of magnitude at high pressure.
- First-principles calculations showed enhanced charge density and energy band dispersion under pressure.
- BiI3 maintained a significant bandgap even after the conduction type transition.
Takeaway
This study shows that by applying pressure to a material called BiI3, we can change how it conducts electricity and make it work better for light detection.
Methodology
The study employed high-pressure characterization and first-principles calculations to investigate the structural and photoelectric properties of BiI3.
Digital Object Identifier (DOI)
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